School of Electrical and Electronic Engineering is one of the founding Schools of the Nanyang Technological University. Built on a culture of excellence, the School is renowned for its high academic standards and research. With over 3,000 undergraduates students and 2,000 graduate students it is one of the largest EEE schools in the world and ranks 4th in the field of Electrical & Electronic Engineering in the 2025 QS World University Rankings by Subjects.
Today, the School has become one of the world’s largest engineering schools that nurtures competent engineers and researchers. Each year, the School graduates over a thousand students who are ready to take on great ambitions and challenges.
For more details, please view: https://www.ntu.edu.sg/eee
We are looking for a Research Fellow to support the research for the project titled: Monolithic Integration of Complementary GaN HEMTs for “All GaN” Next-Generation Power Systems. The job is needed to execute the project funded by NTUitive. A suitable candidate for the job will work on the project to meet the project deliverables. The project outcomes will contribute to the University.
The Research Fellow (RF) will contribute to a research project focused on the development of advanced semiconductor device processing technologies.
Key Responsibilities:
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Development and optimization of semiconductor device fabrication processes and thin-film deposition using cleanroom facilities.
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Development of molecular beam epitaxy (MBE)/ Metal-Organic Chemical Vapor Deposition (MOCVD) growth processes to demonstrate polarization-doped, high-conductivity n- and p-type channels.
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Electrical, structural, and optical characterization of III-nitride semiconductor epiwafers.
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Comprehensive analysis and interpretation of experimental results, and publication of findings in high-impact peer-reviewed journals.
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Independent management of research activities to ensure timely completion of project deliverables.
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Preparation of research proposals, technical reports, and progress updates for funding agencies.
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Support and mentorship of PhD students in their research projects
Job Requirements:
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PhD in Physics, Materials Science, Electrical Engineering, Electronic Engineering, or a closely related field.
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Hands-on experience in III-nitride semiconductor device processing using cleanroom facilities and relevant characterization tools.
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Knowledge of III-nitride heterostructure growth and characterization techniques is highly desirable.
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Prior research experience in III-nitride heterostructures will be considered an advantage.
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Self-motivated, proactive, and able to work both independently and effectively as part of a multidisciplinary team.
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Strong written and spoken English communication skills - essential for data analysis and communication with stakeholders
We regret to inform that only shortlisted candidates will be notified.
