Introduction of Principle Investigator:
Prof. Ye Lu is currently a full professor at Fudan University in Shanghai, China. Fudan is one of the most prestigious and selective research institutions in China, and it ranks 2nd in China and No. 7 in Asia in the 2018 QS Asian University Ranking (https://www.topuniversities.com/university-rankings/asian-university-rankin…). Prof. Lu holds a Ph.D. degree in Physics from the University of Pennsylvania (UPenn), and his Ph.D. thesis is about chemical, structural and electronic properties of graphene devices, which is supervised by professor Charlie Johnson. After finishing up his Ph.D. in 2011, Prof. Lu joined Intel’s Technology Development center working on 22nm and 10nm FinFET technology development in Portland, Oregon, USA. Prof. Lu has worked on FinFET process technology development and device modeling, reliability modeling during his time at Intel. In 2016, Prof. Lu joined Qualcomm in San Diego, USA and worked on RF chip device modeling and Compute In Memory. Prof. Lu recently joined Fudan university as a tenured professor in December 2019. Prof. Lu has published more than 20 papers on Science, Nano Letters, APL, IEEE EDL etc, and these publications have been cited more than 2500 times worldwide. Prof. Lu is also a coinventor of more than 55 U.S. patents/patent applications in the advanced CMOS technology.
Prof. Lu’s main research interests: Integration of CMOS and novel electronic devices. CMOS technology still plays a critical role in today’s electronic world, from CPU/GPU in personal computers/servers, to modem/RF chips in mobile devices. As traditional Moore’s law slows down, novel material devices such as graphene and 2D transition metal dichalcogenides transistors/sensors have drawn tremendous amount of attention. Although it’s still difficult to entirely replace silicon with novel materials for CMOS IC purpose, it is very interesting to integrate CMOS circuits together with novel material devices. In this project, we will first try to integrate CMOS circuits/chip with novel device circuits/chip through packaging technology, and later on using 3D heterogeneous vertical integration. The integrated chip can serve purpose such as point of care devices, miniaturized sensors/transducers and eventually VLSI.
2 Postdoc Openings: Requirements: 1.) Ph.D. in engineering, physics, chemistry or related field is required. We are trying to build a diversified group, so a Ph.D. earned from a renowned North American, European, Japanese or Austalian institution would be a strong plus. 2.) Paper and patent writing skills are required, and strong communication. 3.) Experience with electronic device measurements and measurement set-ups, for example, IV, CV, noise measurements. Hands on experience of electronic device fabrication techniques, such as lithography, etch, deposition etc… Or 4.) Extensive experience with surface chemistry, surface functionalization, bio-chemistry. Familiar with materials characterization techniques such as Raman, SEM, AFM etc..
Compensation: Well qualified candidate can expect an annual salary between $30,000-60,000 US dollars, in addition to other benefits such as subsidized housing, health care, children’s education etc.
2 Ph.D. openings available for highly motivated students: 1.) We are trying to build a diversified group, so fluent communication skills in English is required. 2.) B.S. or M.S. degree in engineering, physics, chemistry or related field is required. Qualified Ph.D. students usually receive full scholarship including tuition and a stipend for living; Health insurance and subsidized housing can also be provided.
Please send your resume and contact information to ( email@example.com ) if interested.