Characterization and identification of electrically-active defects in semiconductors. Recently, this has led to development of new techniques to characterize traps in gallium nitride-based high electron mobility transistors (HEMTs) to identify defects responsible for degradation and reliability problems in these devices. Beyond nitrides, his other research interests include characterization of defects in solar materials, nanowires, and 2D materials using conventional techniques and novel nanometer-scale techniques.
