Wide Bandgap and Ultra-Wide Bandgap Semiconductor Materials and Devices
Dr. Zhao’s research thrust falls under the umbrella of the growth and physics of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductor materials and devices, and the low-dimensional semiconductor nano-materials and devices. Specifically, her research focuses on the metalorganic chemical vapor deposition (MOCVD) of III-nitrides, II-IV-nitrides and III-oxides; low pressure chemical vapor deposition (LPCVD) of Gallium Oxide (Ga2O3) thin films; and growth of nitride and oxide based semiconductor nanomaterials and structures. The device applications include semiconductor electronic and optoelectronic devices: transistors, power electronics, light-emitting diodes for solid state lighting, UV photodetectors and solar cells for renewable energy generation, as well as semiconductor nanomaterials and structures for chemical and biomedical sensing, and microelectromechanical/nanoelectromechanical systems (MEMS/NEMS).
