* Si-based resonant interband tunnel diodes for quantum functional circuitry (mixed-signal, logic, and low power embedded memory) to extend CMOS;
* nanoelectronics: Si-based quantum dot nanoswitches to replace CMOS;
* conjugated polymer-based flexible electronics and foldable optoelectronics and photovoltaics;
* passive millimeter wave imaging for security and safety via Si-based backward diode sensors;
* molecular electronics with quantum functional circuit elements using conjugated polymers;
* optoelectronic devices (photodiodes, LEDs, lasers, waveguide modulators etc.) and optoelectronic integrated circuits (OEIC), such as photorecivers and phototransmitters, leveraging selective area epitaxy;
* and RHEED studies of strained layer molecular beam epitaxy and self-assembled quantum dots.
