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The Senior Research Fellow (RF) will work on a research project to conduct research on the development of compound semiconductor growth and device processing in Energy Research Institute @ NTU (ERI@N).

Key Responsibilities:

• Develop regrowth fabrication process using highly doped GaN structure to reduce the Ohmic contact resistance, preferably having worked in clean room process environment

• Support in the growth of GaN epistructures using MBE growth process technology

• Electrical, structural, surface and optical characterization of III-Nitride semiconductor epiwafers

• Thorough analysis of the results and publish in high impact factor scientific journals

• Independent handling of the project to meet the deliverables timely

• Writing project proposal and technical reports to the funding agencies

• Support PhD students and junior research staff in their research projects

Job Responsibilities:

• PhD in Physics, Materials Science, Electrical and Electronic Engineering or related field

• Hands-on experience with III-Nitride semiconductor heterostructure growth and characterization, and preferably device processing in cleanroom and characterization tools

• Self-driven and motivated person who is a good team player

• Ability to adapt to changing priorities

• Fluent in English and competent in technical writing skills

We regret that only shortlisted candidates will be notified.