The Department of Electrical Engineering at the University of Massachusetts Boston campus currently invites highly motivated researchers for a postdoctoral position in modeling, simulation, and experimentation of high-power wide bandgap semiconductors such as GaN HEMTs for radio frequency (RF) applications. Application of computational methods such as Genetic Algorithms or Al techniques for extraction of large signal active device model parameters is desired. The devices that will be designed, modeled, and simulated will then be used to develop high power MMIC amplifier modules and sensors or as a standalone device to operate in extreme environmental conditions. The position is expected to last two years with the possibility of renewal.
In particular, we are looking for applicants with a demonstrated record of accomplishment in modeling, simulation and testing of RF/Microwave/THz devices and systems for high frequency applications. Demonstrated proficiency in computational methods, programming efficiency (Python, C++, Matlab) and practical experience in RF/Microwave/THz Engineering using active and passive devices are desired.
The candidate will work with both graduate and undergraduate students in a mentoring role, and will be involved in developing research proposals, conducting workshops, seminars, publishing scholarly articles, and required to work on research assignments as needed. The candidate will enjoy a dynamic and collaborative working environment in our cutting-edge Applied Electromagnetics and RF Circuits (AE&RFC) research laboratory at UMass Boston in the heart of Boston city. If interested, please apply electronically and provide curriculum vitae, copies of your top three publications, a summary of your PhD dissertation, names and contact information of three references. Any other information that might be relevant to your application is also welcome. Please also forward all required information to AE&RFC Research Laboratory Director and the Department Chair Dr. Abdullah Eroglu (abdullah.eroglu@umb.edu).
Examples of Duties:
- Design, model and prototyping high power active GaN devices such as GaN HEMTs to operate in extreme environmental conditions.
- Implement the active devices for applications such as MMIC amplifiers, sensors or as a stand-alone device.
- Assist with training and monitoring undergraduate and graduate students.
- Assist with writing of scientific publications such as journal and conference papers and grants.
- Participate in other departmental activities as assigned by Pl.
- Perform other duties as assigned.
Qualifications:
PhD in Electrical Engineering or related field. Experience in at least two of the following areas required:
- RF/Microwave or THz Engineering applications.
- Active and passive device characterization measurement and modeling for high frequency applications.
- Familiarity with computational methods using Al/ML or Genetic Algorithms and programming efficiency (Python, C++, Matlab)
Application Instructions:
Please apply online with your resume, cover letter and list of three references.
Review of candidates will begin following the application closing date.
Salary Range: Commensurate with experience
This is a non-union exempt position.
All official salary offers must be approved by Human Resources.
UMass Boston is committed to the full inclusion of all qualified individuals. As part of this commitment, we will ensure that persons with disabilities are provided reasonable accommodations for the hiring process. If reasonable accommodation is needed, please contact HRDirect@umb.edu or 617-287-5150.
